IT130A [Linear Systems]
MONOLITHIC DUAL PNP TRANSISTORS; 单片双PNP晶体管
| 型号： | IT130A |
| 厂家： | 
Linear Systems |
| 描述： | MONOLITHIC DUAL PNP TRANSISTORS |
| 文件： | 总2页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IT130A IT130 IT131 IT132
MONOLITHIC DUAL
PNP
Linear Integrated Systems
TRANSISTORS
FEATURES
Direct Replacement for Intersil IT130 Series
Pin for Pin Compatible
C1
C2
E1
E2
3
1
5
7
ABSOLUTE MAXIMUM RATINGS NOTE 1
(T = 25°C unless otherwise noted)
A
B1 2
6 B2
IC
Collector Current
10mA
Maximum Temperatures
Storage Temperature Range
Operating Junction Temperature
-65°C to +200°C
+150°C
C1
C2
B1
E1 E2 B2
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
26 X 29 MILS
BOTTOM VIEW
4.3mW/°C
ELECTRICAL CHARACTERISTICS TA= 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS IT130A IT130 IT131 IT132
UNITS CONDITIONS
BVCBO
BVCEO
BVEBO
BVCCO
hFE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
45
45
6.2
60
45
45
6.2
60
45
45
6.2
60
80
100
0.5
1
45
45
6.2
60
80
MIN.
MIN.
MIN.
MIN.
MIN.
V
V
V
V
IC = 10µA IE = 0
IC = 10µA IB = 0
IE = 10µA IC = 0
NOTE 2
IC = 10µA IE = 0
200 200
225 225
IC = 10µA VCE = 5V
IC = 1.0mA VCE = 5V
100 MIN.
VCE(SAT) Collector Saturation Voltage
0.5
1
0.5
1
0.5
1
MAX.
V
IC = 0.5mA IB = 0.05mA
IEBO
ICBO
COBO
CC1C2
IC1C2
fT
Emitter Cutoff Current
MAX. nA
MAX. nA
MAX. pF
MAX. pF
MAX. nA
IC = 0
VEB = 3V
VCB = 45V
VCB = 5V
Collector Cutoff Current
1
1
1
1
IE = 0
Output Capacitance
2
2
2
2
IE = 0
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
4
4
4
4
VCC = 0
VCC= ±60V
10
10
10
90
3
10
90
3
110 110
MIN. MHz IC = 1mA
VCE = 5V
NF
3
3
MAX. dB
IC = 100µA VCE = 5V
BW = 200Hz, RG = 10 KΩ
f=1KHz
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
IT130A IT130 IT131 IT132
UNITS CONDITIONS
|VBE1-VBE2
|
Base Emitter Voltage Differential
1
3
2
5
3
5
MAX. mV
IC = 10 µA
VCE = 5V
∆|(VBE1-VBE2)|/∆T Base Emitter Voltage Differential
10
20
MAX. µV/°C IC = 10 µA
VCE = 5V
Change with Temperature
T = -55°C to +125°C
|IB1- IB2
|
Base Current Differential
2.5
5
25
25
MAX. nA
IC = 10 µA VCE = 5V
TO-71
TO-78
P-DIP
Six Lead
(8.13)
(7.37)
0.320
0.290
0.335
0.370
0.230
DIA.
0.195
0.175
0.209
DIA.
0.305
0.335
C1 1
C2
B2
8
7
MAX.
0.030
0.150
0.405
(10.29)
MAX.
0.165
0.185
0.040
MAX.
B1 2
E1 3
0.115
0.016
0.019
DIM. A
6 E2
MIN. 0.500
6 LEADS
0.019
0.016
0.500 MIN.
0.050
0.016
0.021
DIM. B
N/C 4
5
N/C
SEATING
PLANE
DIA.
0.200
0.100
0.100
0.029
0.045
SOIC
3
7
3
7
2
1
8
4
5
6
2
4
0.150 (3.81)
0.158 (4.01)
1
8
5
6
0.100
C1 1
C2
B2
8
45°
45°
B1
2
0.188
7
6
5
(4.78)
0.046
0.036
0.048
0.028
0.028
0.034
0.197(5.00)
E1 3
E2
N/C
4
N/C
(5.79)
0.228
(6.20)
0.244
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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